| 摘要 |
<p>In a semiconductor memory device having plural pairs of bit lines sense plural sense amplifiers, a gate electrode of a sense amplifier transistor for sensing potential of a first side of a first bit line pair is formed with an extension portion extending under and along the first side of a second bit line pair, and a capacitance CB formed between the extension of the gate electrode and the first side of the second bit line pair is determined to be equal or larger than that CA formed between the first side of the first bit line pair and the gate electrode. Since the potential of the first side of the bit line pair fluctuates roughly in phase with that of the second side of the same bit line pair, the harmful influence due to interference noise can be reduced, without increasing the chip layout area, by only modifying the shapes of the gate electrodes of the sense amplifier transistors.</p> |
