| 摘要 |
<p>PURPOSE:To decrease the number of production stages for the liquid crystal display element for which elements of an MSI type are used and to improve the yield of the production. CONSTITUTION:This method and structure consist of the constitution consisting in subjecting A1 as a lower electrode and AlNx (0<x<1) as a semiconductive insulating layer to continuous vacuum deposition in a vacuum to form thin films 11a, 12a respectively on a transparent substrate, simultaneously patterning these thin films by etching to form the lower electrode 11 and the semiconductive insulating layer 12, further, oxidizing the end face of the lower electrode by an anodic oxidation method to form the end face as an oxidized insulating layer 15, and forming an upper electrode 13 and a transparent picture element electrode 14.</p> |
