MULTILAYERED INTERMETALLIC CONNECTION FOR SEMICONDUCTOR DEVICES

摘要

A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (< 2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally, onto said top intermetallic layer is further deposited a non-reflective, non-corrosive, etch-stop, capping layer.