发明名称 |
Semiconductor device including bipolar transistor having shallowed base and method for manufacturing the same |
摘要 |
A semiconductor device of this invention includes an N-type semiconductor region functioning as a collector of a bipolar transistor, a silicon dioxide film doped with boron and formed in contact with the surface of the N-type semiconductor region, a P-type semiconductor region formed in contact with the silicon dioxide film doped with boron in the N-type semiconductor region and functioning as a base of the bipolar transistor, and an N-type semiconductor region formed in the P-type semiconductor region and functioning as an emitter of the bipolar transistor.
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申请公布号 |
US5406115(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19930052919 |
申请日期 |
1993.04.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEDA, TAKEO;GOJOHBORI, HIROSHI;TSUNASHIMA, YOSHITAKA |
分类号 |
H01L29/73;H01L21/331;H01L27/06;H01L29/10;H01L29/732;(IPC1-7):H01L29/72;H01L27/02 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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