| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a wafer for a light emitting diode by which an LED chip which has a uniform forward voltage characteristic in a lot and a wafer surface can be obtained by making the thickness of a top clad layer or bottom clad layer as uniform as possible. <P>SOLUTION: On a semiconductor substrate 110, the top clad layer, an active layer, and the bottom clad layer in this order by epitaxial growth so that the bottom clad layer is thicker than the other layer and after the semiconductor substrate 110 is dissolved and removed, the surface of the bottom clad layer is polished and flattened. <P>COPYRIGHT: (C)2003,JPO |
