发明名称 |
RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE USING THE SAME AND MANUFACTURE THERE OF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a resistance element in which a stable resistance value can be obtained even if a little mask scale slippage is developed, and a semiconductor device using this, and a method for manufacturing them. SOLUTION: This resistance element is formed of a wiring layer consisting of a high resistance part 21 having a bending part having a bending angleθprovided in an area including this bending part, and low resistance parts 22a and 22b. A boundary 23 between the low resistance parts 22a 22b and the high resistance part 21 is set almost parallel with a bisector 25 of the bending angleθ.</p> |
申请公布号 |
JPH11204731(A) |
申请公布日期 |
1999.07.30 |
申请号 |
JP19980004809 |
申请日期 |
1998.01.13 |
申请人 |
NEC CORP |
发明人 |
TAKAHASHI HISASHI;KUMAMOTO KEITA |
分类号 |
H01C13/00;H01C7/00;H01C17/06;H01L21/265;H01L21/822;H01L23/528;H01L27/04;H01L27/11;(IPC1-7):H01L27/04 |
主分类号 |
H01C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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