发明名称 Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component
摘要 A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.
申请公布号 US6008525(A) 申请公布日期 1999.12.28
申请号 US19970993613 申请日期 1997.12.18
申请人 PRESIDENT AND FELLOWS OF HARVARD COLLEGE;TRIQUINT SEMICONDUCTOR, INC.;THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION 发明人 BARRON, ANDREW R.;HEPP, ALOYSIUS F.;JENKINS, PHILLIP P.;MACINNES, ANDREW N.
分类号 H01L29/737;H01L31/0216;H01L33/44;(IPC1-7):H01L23/58;H01L29/78 主分类号 H01L29/737
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