发明名称 |
Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component |
摘要 |
A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.
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申请公布号 |
US6008525(A) |
申请公布日期 |
1999.12.28 |
申请号 |
US19970993613 |
申请日期 |
1997.12.18 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE;TRIQUINT SEMICONDUCTOR, INC.;THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
BARRON, ANDREW R.;HEPP, ALOYSIUS F.;JENKINS, PHILLIP P.;MACINNES, ANDREW N. |
分类号 |
H01L29/737;H01L31/0216;H01L33/44;(IPC1-7):H01L23/58;H01L29/78 |
主分类号 |
H01L29/737 |
代理机构 |
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地址 |
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