Method of manufacturing semiconductor device

摘要

A manufacturing method of a semiconductor device of the present invention comprises the steps of forming an amorphous layer on an upper layer of the impurity diffusion layer made of silicon by virtue of ion-implantation, forming a cobalt film on the impurity diffusion layer, forming a cobalt silicide layer made of Co2Si or CoSi on an upper layer of the amorphous layer at a low temperature by reacting the cobalt film to silicon in the impurity diffusion layer in virtue of first annealing, then removing the cobalt film which has not reacted, and changing Co2Si or CoSi constituting the cobalt silicide layer into CoSi2 to have low resistance and also rendering the cobalt silicide layer to enter into a depth identical to or deeper than an initial depth of the amorphous layer in virtue of second annealing.