PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A BURIED CHANNEL FIELD EFFECT TRANSISTOR,申请号EP19990900239-传众专利搜索

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发明名称	PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A BURIED CHANNEL FIELD EFFECT TRANSISTOR
摘要
申请公布号	EP0974160(A1)	申请公布日期	2000.01.26
申请号	EP19990900239	申请日期	1999.01.21
申请人	KONINKLIJKE PHILIPS ELECTRONICS N.V.	发明人	FRIJLINK, PETER;OSZUSTOWICZ, JEAN-LUC
分类号	H01L29/812;H01L21/285;H01L21/335;H01L21/336;H01L21/338;H01L29/778;H01L29/78;(IPC1-7):H01L21/336	主分类号	H01L29/812
代理机构		代理人
主权项
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