| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an excellent positive photoresist composition for exposure to far UV rays and having a wide defocus latitude of an isolated line pattern. <P>SOLUTION: The positive resist composition contains (A) a resin which has specified two kinds of repeating units having alicyclic groups and which increases the dissolving rate with an alkali developer by the effect of an acid and (B) a compound which generates an acid by irradiation with active rays or radiation. <P>COPYRIGHT: (C)2003,JPO |
