| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which can be suitably applied to a capacitor, especially a capacitor large in capacitance and occupying space. SOLUTION: A semiconductor device is equipped with an electrostatic capacity 100 formed on a silicon board. The electrostatic capacity 100 is divided into a plurality of unit electrostatic capacities 21, and the unit electrostatic capacities 21 are demarcated from each other with isolation insulating layers 20. Each unit electrostatic capacity 21 is equipped with a first electrode layer of impurity diffused layer formed inside the silicon substrate, a second electrode layer of conductive polysilicon layer, and a dielectric layer of silicon oxide interposed between the first and second electrode layer. The unit electrostatic capacity 21 are connected together in series with connection parts 41. |
