| 摘要 |
A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region between the first surface and the drift region (106). The device further includes at least one voltage divider (104) disposed within the semiconductor block. The voltage divider has a first end adjacent to the first surface and electrically coupled to the source region, and a second end extending through and electrically coupled to the drain region. |
