| 摘要 |
PROBLEM TO BE SOLVED: To enhance a semiconductor device in memory capacity by a method wherein a first and a second lead address terminal and corresponding control terminals are made to overlap with each other in a vertical direction and connected in common, and a first and a second memory chip are housed in a package separating data input/output terminals from each other. SOLUTION: A DRAM package is equipped with DRAM sub-chips A and B. An address multiplex system is adopted in the sub-chips A and B, and an address space is designated in an alternative way in accordance with 13-bit X address signals X0 to X12 and Y address signals Y0 to Y12 fed in a time division way through the intermediary of 13 address input terminal A0 to A12. The data input pads Din and data output pads Dout of the sub-chips A and B are each connected to the data input terminal Din and data output terminal Dout of the DRAM package in common. The address input pads A0 to A12 of the sub-chips A and B are connected to the address input pads A0 to A12 of the DRAM package in common. |
