INTEGRATED CIRCUIT LOW LEAKAGE POWER CIRCUITRY FOR USE WITH AN ADVANCED CMOS PROCESS,申请号KR1020017013833-传众专利搜索

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发明名称	INTEGRATED CIRCUIT LOW LEAKAGE POWER CIRCUITRY FOR USE WITH AN ADVANCED CMOS PROCESS
摘要
申请公布号	KR20020042759(A)	申请公布日期	2002.06.07
申请号	KR1020017013833	申请日期	2001.10.29
申请人		发明人
分类号	G11C11/41	主分类号	G11C11/41
代理机构		代理人
主权项
地址

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