发明名称 PLASMA FILM-FORMING APPARATUS AND PROCESS FOR FORMING CARBON FILM
摘要 PROBLEM TO BE SOLVED: To provide a plasma film-forming apparatus having a simple structure which enables the formation of a uniform carbon film with a large area, and a process for forming a carbon film. SOLUTION: The plasma film-forming apparatus 1 is equipped with at least a reaction chamber 2 into which a reactive gas is introduced, an anode 3 positioned inside the reaction chamber 2 and a rod-shaped cathode 4. The apparatus forms a carbon film on a substrate 8 placed above the anode 3 by allowing the reactive gas to react with plasma generated through electric discharge between the cathode 4 and the anode 3. The cathode 4 consists of multiple discharge parts 4b, 4c and 4d having different thermoelectronic emission characteristics which are arranged in the decreasing order of their thermoelectronic emission characteristics toward the anode 3.
申请公布号 JP2002275630(A) 申请公布日期 2002.09.25
申请号 JP20010074529 申请日期 2001.03.15
申请人 MITSUBISHI MATERIALS CORP 发明人 YOSHIKAWA HIROMICHI;NISHIYAMA AKIO
分类号 C23C16/26;C23C16/27;(IPC1-7):C23C16/26 主分类号 C23C16/26
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