发明名称 |
PLASMA FILM-FORMING APPARATUS AND PROCESS FOR FORMING CARBON FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film-forming apparatus having a simple structure which enables the formation of a uniform carbon film with a large area, and a process for forming a carbon film. SOLUTION: The plasma film-forming apparatus 1 is equipped with at least a reaction chamber 2 into which a reactive gas is introduced, an anode 3 positioned inside the reaction chamber 2 and a rod-shaped cathode 4. The apparatus forms a carbon film on a substrate 8 placed above the anode 3 by allowing the reactive gas to react with plasma generated through electric discharge between the cathode 4 and the anode 3. The cathode 4 consists of multiple discharge parts 4b, 4c and 4d having different thermoelectronic emission characteristics which are arranged in the decreasing order of their thermoelectronic emission characteristics toward the anode 3.
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申请公布号 |
JP2002275630(A) |
申请公布日期 |
2002.09.25 |
申请号 |
JP20010074529 |
申请日期 |
2001.03.15 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
YOSHIKAWA HIROMICHI;NISHIYAMA AKIO |
分类号 |
C23C16/26;C23C16/27;(IPC1-7):C23C16/26 |
主分类号 |
C23C16/26 |
代理机构 |
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