发明名称 Method for etching metal layer on a scale of nanometers
摘要 A method for etching a metal layer on a scale of nano meters, includes preparing a substrate on which a metal layer is formed, positioning a micro tip over the metal layer, generating an electron beam from the micro tip by applying a predetermined voltage between the metal layer and the micro tip, and etching the surface of the metal layer into a predetermined pattern with the electron beam. Accordingly, it is possible to form an etched pattern by applying a negative bias to a micro tip without applying a strong mechanical force to the micro tip, and heating/melting the metal layer with the use of an electron beam emitted from the micro tip which is negative-biased.
申请公布号 US2002168825(A1) 申请公布日期 2002.11.14
申请号 US20010029814 申请日期 2001.12.28
申请人 KIM BYONG-MAN;CHAE SOO-DOO;CHAE HEE-SOON;RYU WON-IL 发明人 KIM BYONG-MAN;CHAE SOO-DOO;CHAE HEE-SOON;RYU WON-IL
分类号 B81C1/00;B82B3/00;C23C28/00;C23C30/00;C23F1/02;C23F4/00;G11B9/00;G11B9/10;H01L21/302;H01L21/3065;(IPC1-7):H01L21/336;H01L21/320 主分类号 B81C1/00
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