发明名称 |
Method for making semiconductor device including band-engineered superlattice |
摘要 |
A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise occur. The superlattice may also have a common energy band structure therein.
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申请公布号 |
US7033437(B2) |
申请公布日期 |
2006.04.25 |
申请号 |
US20030717370 |
申请日期 |
2003.11.19 |
申请人 |
RJ MEARS, LLC |
发明人 |
MEARS ROBERT J.;YIPTONG JEAN AUGUSTIN CHAN SOW FOOK;HYTHA MAREK;KREPS SCOTT A.;DUKOVSKI ILIJA |
分类号 |
C30B25/02;H01L21/8238;H01L29/10;H01L29/15;H01L29/78 |
主分类号 |
C30B25/02 |
代理机构 |
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主权项 |
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地址 |
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