| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline dielectric layer and to provide a semiconductor device using the dielectric layer. SOLUTION: The polycrystalline dielectric layer 20 is made of a first dielectric material comprising oxide or nitride, and a second material which is less than 1 wt.% of the weight of the dielectric layer. To reduce leakage current along a boundary of a particle 21 of the first dielectric material, the second material for forming non-conductive oxide or nitride having enthalpy lower than that of the first dielectric material is comprised, and arranged at the boundary of the particle of the first dielectric material. COPYRIGHT: (C)2007,JPO&INPIT
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