发明名称 |
Methods to improve photonic performances of photo-sensitive integrated circuits |
摘要 |
Described is a light-directing feature formed in the inter-level dielectric (ILD) layer in combination with an anti-reflective (AR) layer to effectively and simultaneously increase quantum efficiency and cross-talk immunity thereby improving photonic performances of photo-sensitive integrated circuits. A plurality of photosensor cells is formed on a semiconductor substrate. An AR layer is subsequently formed on the plurality of photosensor cells, the AR layer being substantially non-reflective of incident light. An ILD layer is then formed over the AR layer, the ILD layer comprising a plurality of light-directing features formed in openings in the ILD layer over the AR layer above and about certain of the plurality of photosensor cells.
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申请公布号 |
US7189957(B2) |
申请公布日期 |
2007.03.13 |
申请号 |
US20050906604 |
申请日期 |
2005.02.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FU SHIH-CHI;LIU YUAN-HUNG;LIN KUO-YIN;SHIU FENG-JIA;TSAI CHIA-SHIUNG;KUO CHING-SEN;CHEN JIEH-JANG |
分类号 |
H01L31/00;H01L21/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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