发明名称 |
Halbleitervorrichtung mit einer Abstandsschicht, die mit langsamer diffundierenden Atomen dotiert ist als das Substrat |
摘要 |
A semiconductor device includes a silicon substrate heavily-doped with phosphorous. A spacer layer is disposed over the substrate and is doped with dopant atoms having a diffusion coefficient in the spacer layer material that is less than the diffusion coefficient of phosphorous in silicon. An epitaxial layer is also disposed over the substrate. A device layer is disposed over the substrate, and over the epitaxial and spacer layers. |
申请公布号 |
DE112005001048(T5) |
申请公布日期 |
2007.05.03 |
申请号 |
DE20051101048T |
申请日期 |
2005.05.19 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORP. |
发明人 |
WANG, QI;CRELLIN-NGO, AMBER;PARAVI, HOSSEIN |
分类号 |
H01L29/76;H01L21/336;H01L29/08;H01L29/167;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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