| 摘要 |
A PCM structure configurable for use as a nonvolatile storage element includes a first electrode, a first phase change material layer formed on at least a portion of an upper surface of the first electrode, at least one insulating layer formed on an upper surface of the first phase change material layer, at least a second phase change material layer formed on an upper surface of the at least first insulating layer, and a second electrode formed on at least a portion of an upper surface of the at least second phase change material layer. The insulating layer is configurable for forming an aperture therethrough in response to a first signal of a prescribed level applied between the first and second electrodes, the aperture constricting a flow of current in the PCM structure to thereby create a region of localized heating in the first and second phase change material layers in response to a second signal applied between the first and second electrodes.
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