| 摘要 |
A cleaning solution for a substrate for a semiconductor device is provided to efficiently remove impurity metal and particles remaining on the surface of a substrate for a semiconductor device by cleaning a substrate for a semiconductor device after a planarization process is performed by a CMP method. After a planarization process using a CMP method, a substrate for a semiconductor device is cleaned by a cleaning solution containing a compound and an organic acid indicated by the following general formula(I). In the formula(1), R is a hydrocarbon group, and n and m are individually integers not smaller than 2. The sum of n and m can be from 4 to 4000. The hydrogen ion concentration of the cleaning solution can be from 1 to 5. The organic acid can be a carboxyl acid.
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