发明名称 VPP GENERATING CIRCUIT FOR GENERATING VPP IN STABLE LEVEL UNDER WIDE RANGE VCC AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
摘要 A VPP generating circuit for generating a VPP in a stable level under a wide range VCC and a semiconductor memory device having the same are provided to have a stable level as to the wide range VCC, by reducing overshoot of the VPP due to a second boosting pump. According to a VPP generating circuit, a boosting level detection part(110) generates a target level detection signal and a margin level detection signal. The target level detection signal has a logic state according to the level of the boosting voltage as to a target voltage level, and the margin level detection signal has a logic state according to the level of the boosting voltage as to a margin voltage level higher than the target voltage level. A first boosting pump(130) generates the boosting voltage by pumping a power supply voltage, and the pumping of the first boosting pump is controlled by the target level detection signal. A second boosting pump(150) generates the boosting voltage by pumping the power supply voltage, and the pumping of the second boosting pump is controlled by the margin level detection signal.
申请公布号 KR20070095677(A) 申请公布日期 2007.10.01
申请号 KR20060026174 申请日期 2006.03.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOUN, JAE YOUN;PARK, HAN NA
分类号 G11C5/14 主分类号 G11C5/14
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