发明名称 |
VPP GENERATING CIRCUIT FOR GENERATING VPP IN STABLE LEVEL UNDER WIDE RANGE VCC AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME |
摘要 |
A VPP generating circuit for generating a VPP in a stable level under a wide range VCC and a semiconductor memory device having the same are provided to have a stable level as to the wide range VCC, by reducing overshoot of the VPP due to a second boosting pump. According to a VPP generating circuit, a boosting level detection part(110) generates a target level detection signal and a margin level detection signal. The target level detection signal has a logic state according to the level of the boosting voltage as to a target voltage level, and the margin level detection signal has a logic state according to the level of the boosting voltage as to a margin voltage level higher than the target voltage level. A first boosting pump(130) generates the boosting voltage by pumping a power supply voltage, and the pumping of the first boosting pump is controlled by the target level detection signal. A second boosting pump(150) generates the boosting voltage by pumping the power supply voltage, and the pumping of the second boosting pump is controlled by the margin level detection signal.
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申请公布号 |
KR20070095677(A) |
申请公布日期 |
2007.10.01 |
申请号 |
KR20060026174 |
申请日期 |
2006.03.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOUN, JAE YOUN;PARK, HAN NA |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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