发明名称 |
ABRASIVE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD FOR POLISHING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURING METHOD |
摘要 |
<p>To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized. A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.</p> |
申请公布号 |
EP1860688(A1) |
申请公布日期 |
2007.11.28 |
申请号 |
EP20060714784 |
申请日期 |
2006.02.27 |
申请人 |
ASAHI GLASS COMPANY, LIMITED;AGC SEIMI CHEMICAL CO., LTD. |
发明人 |
YOSHIDA, IORI;KON, YOSHINORI |
分类号 |
H01L21/304;B24B37/04;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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