| 摘要 |
A solid-state imaging device includes: multiple pixels making up a slanted grid array inclined to a scanning direction, which include a photoelectric conversion unit configured to convert incident light quantity into an electric signal; and a charge-to-voltage conversion unit configured to convert signal charge read out from the photoelectric conversion unit disposed between two pixels adjacent to each other in the diagonal direction of the pixels of the multiple pixels into voltage; wherein the charge-to-voltage conversion unit is shared with the two pixels; and wherein a set of transistor group are disposed in a sharing block, which is configured of a pixel pair made up of the two pixels adjacent to each other in the diagonal direction, and a pixel pair adjacent to that pixel pair, including wiring to which the charge-to-voltage conversion unit of each pixel pair is connected.
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