发明名称 INNER MASK USED IN SINGLE WAFER PROCESSING SPUTTERING APPARATUS FOR SUBSTRATE AND SINGLE WAFER PROCESSING SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an inner mask that can prevent swell (waviness) and the increase of birefringence due to the distortion of a substrate, which may occur when the substrate such as an optical disc is subjected to a sputtering process in a single wafer processing sputtering apparatus with the use of the inner mask, and to provide the single wafer processing sputtering method using the inner mask. SOLUTION: (1) The inner mask to be used in the single wafer processing sputtering apparatus for the substrate comprises: a main body of the inner mask on the disc; and a heat radiation inhibition part that is arranged on the outer edge of an opposite face of the main body of the inner mask, which opposes to a face to be sputtered of the substrate, contacts the face to be sputtered of the substrate, and inhibits the substrate which has accumulated heat generated by sputtering, from radiating the heat toward the main body of the inner mask. (2) In the inner mask according to an aspect (1), the heat radiation inhibition parts are dispersively arranged on the outer edge of the opposite face, and have a plurality of protruding portions each of which point-contacts the face to be sputtered of the substrate, or the heat radiation inhibition part is a heat insulation member which is arranged in a ring shape on the surface of the outer edge. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008208411(A) 申请公布日期 2008.09.11
申请号 JP20070045269 申请日期 2007.02.26
申请人 RICOH CO LTD 发明人 NODA EIJI
分类号 C23C14/56;C23C14/04;C23C14/24;C23C14/34;C23C14/50;G11B7/26 主分类号 C23C14/56
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