| 摘要 |
<p>Disclosed is an etching method for a next generation semiconductor etching process including a breakthrough step, a main etch step, and an over etch step, the etching method including the steps of (a) setting a range of at least one of process parameters including a flow rate, pressure, temperature, magnetic field, and RF power in at least one of the breakthrough, main etch, and over etch steps; and (b) gradually changing the corresponding process parameter linearly or non- linearly over time within the set range. During a next generation semiconductor process, the etch rate, etch profile, selectivity, and contact etching process performance regarding the top/bottom CD are improved substantially, making it is possible to overcome the etch limit of the contact CD that is gradually becoming smaller and deeper.</p> |
