FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT ELEMENT, AND MANUFACTURING METHOD OF THEM

摘要

PROBLEM TO BE SOLVED: To provide a novel field effect transistor, regarding a field effect transistor of a multigate structure having a channel region containing Ge atoms. SOLUTION: The field effect transistor includes: a semiconductor substrate containing Si atoms; a projection structure which is formed on the semiconductor substrate and contains Si atoms and Ge atoms; a channel region which is formed in the projection structure and contains Ge atoms; an insulating film embedded at the lower part of the channel region; a source/drain region which is formed in the projection structure and connected with the semiconductor substrate through the projection structure; a gate insulating film formed on the channel region; and a gate electrode formed on the channel region via the gate insulating film. COPYRIGHT: (C)2009,JPO&INPIT