| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a lower gate electrode of a peripheral circuit portion that is thicker than a lower gate electrode of a memory cell portion, establishes the stability of the electrical characteristics of a memory cell transistor and the stability of the operation of a peripheral circuit transistor, and is reduced in size at microlevel and is highly integrated. SOLUTION: According to the semiconductor device, a first insulating film 2 is formed in a memory cell formation region 6 and a peripheral circuit formation region 7 of a semiconductor layer 1. A first electrode layer 3 is so formed on the first insulating film 2 that the first electrode layer 3 is thicker in the region 6 than in the region 7. A plurality of element isolating regions 5 are formed in the regions 6 and 7. A second insulating film 8 is formed on respective element isolating regions 5 and on the first electrode layer 3. A second electrode layer 12 is formed on the second insulating layer 8, and part of the second electrode layer 12 is buried in openings 11a and 11b, which penetrate the second insulating film 8 to reach the inside of the first electrode layer 3 in the regions 6 and 7, so that the second electrode layer 12 is connected electrically to the first electric layer 3. COPYRIGHT: (C)2009,JPO&INPIT
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