A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND A SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device comprises the steps of, in sequence: depositing a first silicon layer; patterning the first silicon layer to obtain a first silicon region; implanting a first dopantinto a first part of the first silicon region, the first part ofthe first silicon region defined using a first mask; depositing a second silicon layer; patterning the second silicon layer to obtain a second silicon region; and implanting a second dopant into a second part of the first silicon region, the second part of the first silicon regiondefined by the first mask and the second silicon region. A device comprises a semiconductor layer (6); a first doped region (5) within the semiconductor layer; a second doped region (7) within the first doped region (5); and a silicon layer (9) disposed over a part of the semiconductor layer; wherein the silicon layer is disposed over a part of the first doped region (5) but not over the second doped region (7).