| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric porcelain for high frequency, which has a dielectric constant ε<SB>r</SB>in the range of 17 to 75 and a high Q value, and in which the temperature coefficient τ<SB>f</SB>of resonance frequency can be optionally controlled in the vicinity of 0 ppm/°C, and the adhesive strength of a plating film can be increased, and which is suitable for a dielectric porcelain provided on a dielectric resonator. <P>SOLUTION: The dielectric ceramic for high frequency is an oxide porcelain containing Mg, Ba, Re (Re is at least one kind selected from La, Ce, Pr, Nd, Sm, Eu, Dy and Er), Ti and O, and, provided that when the compositional formula thereof is expressed by aMgO-bBaO-cRe<SB>2</SB>O<SB>n</SB>-(100-a-b-c)TiO<SB>2</SB>(n=3 when Re is La, Nd, Sm, Eu, Dy or Er; n=11/3 when Are is Pr; and, n=4 when Re is Ce), a, b and c satisfy, by mol%, the conditions of 10.0≤a≤62.0, 0<b≤14.0, and 0<c≤16.5. <P>COPYRIGHT: (C)2003,JPO |
