SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a composition capable of suppressing an increase in oxygen deficiency in an oxide semiconductor layer; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a first insulation layer; a first oxide semiconductor layer formed on the first insulation layer; a second oxide semiconductor layer formed on the first oxide semiconductor layer; a third oxide semiconductor layer formed on the second oxide semiconductor layer; a source electrode layer and a drain electrode layer which are formed on the third oxide semiconductor layer; a fourth oxide semiconductor layer formed on the source electrode layer, the drain electrode layer and the third oxide semiconductor layer; a gate insulation layer formed on the fourth oxide semiconductor layer; a gate electrode layer formed on the gate insulation layer so as to overlap the source electrode layer, the drain electrode layer and the fourth oxide semiconductor layer; and a second insulation layer formed on the first insulation layer, the source electrode layer, the gate electrode layer and the drain electrode layer.SELECTED DRAWING: Figure 1