发明名称 |
Reduced current leakage semiconductor device |
摘要 |
A method for fabricating a semiconductor device may include receiving a gated substrate comprising a substrate with a channel layer and a gate structure formed thereon, over-etching the channel layer to expose an extension region below the gate structure, epitaxially growing a halo layer on the exposed extension region using a first in-situ dopant and epitaxially growing a source or drain on the halo layer using a second in-situ dopant, wherein the first in-situ dopant and the second in-situ dopant are of opposite doping polarity. Using an opposite doping polarity may provide an energy band barrier for the semiconductor device and reduce leakage current. A corresponding apparatus is also disclosed herein. |
申请公布号 |
US9397161(B1) |
申请公布日期 |
2016.07.19 |
申请号 |
US201514631886 |
申请日期 |
2015.02.26 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Cheng-Wei;Kerber Pranita;Kim Young-Hee;Leobandung Effendi;Sun Yanning |
分类号 |
H01L21/205;H01L29/08;H01L29/06;H01L29/66;H01L29/78;H01L29/20;H01L29/205;H01L29/207;H01L29/36;H01L29/38;H01L21/18;H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
McDaniel Steven F. |
主权项 |
1. A method to fabricate a semiconductor device, the method comprising:
receiving a gated substrate comprising a substrate with a channel layer and a gate structure formed thereon; etching the channel layer to expose an extension region below the gate structure; epitaxially growing a halo layer on the exposed extension region that laterally overlaps the gate using a first in-situ dopant; and epitaxially growing a source or drain on the halo layer using a second in-situ dopant that has an opposite doping polarity than the first in-situ dopant. |
地址 |
Armonk NY US |