发明名称 |
Method of plasma-enhanced atomic layer etching |
摘要 |
A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into the reaction space; providing a pulse of an etching gas into the continuous inert gas flow upstream of the reaction space to chemisorb the etching gas in an unexcited state on a surface of the substrate; and providing a pulse of RF power discharge between electrodes to generate a reactive species of the inert gas in the reaction space so that the layer on the substrate is etched. |
申请公布号 |
US9396956(B1) |
申请公布日期 |
2016.07.19 |
申请号 |
US201514598532 |
申请日期 |
2015.01.16 |
申请人 |
ASM IP Holding B.V. |
发明人 |
Fukazawa Atsuki |
分类号 |
H01L21/3065;H01L21/311;H01J37/32;H01L21/3213;H01L21/67 |
主分类号 |
H01L21/3065 |
代理机构 |
Snell & Wilmer LLP |
代理人 |
Snell & Wilmer LLP |
主权项 |
1. A method for etching a layer on a substrate placed between electrodes in a reaction space by an atomic layer etching (ALE) process which comprises at least one etching cycle, wherein an etching cycle comprises:
continuously providing an inert gas flowing at least as a carrier gas for an etching gas into the reaction space, wherein the carrier gas flows through a mass flow controller and then through a gas manifold disposed upstream of the reaction space, said inert gas referring to a gas that does not etch the substrate in an unexcited state; providing a pulse of an etching gas into the continuous inert gas flow upstream of the reaction space to chemisorb the etching gas in an unexcited state on a surface of the substrate in the reaction space, wherein the etching gas flows through a mass flow controller and is converged into the carrier gas flow downstream of the mass flow controller for the carrier gas and upstream of the gas manifold; continuously providing a reactant gas other than the carrier gas and the etching gas into the reaction space, wherein each reaction gas flows through a mass flow controller and is then converged into the etching gas with the carrier gas at the gas manifold; and providing a pulse of RF power discharge between the electrodes to generate a reactive species of the inert gas in the reaction space and to contact the etching gas-chemisorbed surface of the substrate with the reactive species so that the layer on the substrate is etched. |
地址 |
Almere NL |