| 摘要 |
An antiparallel (AP)-pinned spin valve (SV) sensor is provided with an AFM layer of Pt-Mn having a thickness less than 100 Å and using the magnetic field of the sense current to assist the AFM layer in pinning the magnetization of the AP-pinned layer. The SV sensor has positive and negative read signal symmetry about a zero bias point of a transfer curve due to the influences of the a net sense current field, a ferromagnetic coupling field and a demagnetization field being counterbalanced by a net image field from asymmetric positioning of the SV sensor between first and second shield layers. The SV sensor includes an AP-pinned layer with first and second ferromagnetic pinned layers where the second pinned layer adjacent to a spacer layer is thicker than the first pinned layer. The direction of the sense current is chosen so that its magnetic field at the pinned layer is in the same direction as the magnetization of the thicker second pinned layer so as to assist in pinning of the AP-pinned layer to provide stable operation of the SV sensor.
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