| 发明名称 |
Semiconductor device with multiple carrier channels |
| 摘要 |
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the semiconductor device and a gate electrode having multiple gate fingers of different lengths penetrating the layered structure to reach and control corresponding carrier channels at the different depths. The semiconductor device also includes a carrier electrode having multiple carrier fingers of different lengths penetrating the layered structure to access the corresponding carrier channels. The carrier fingers are interdigitated with the gate fingers. |
| 申请公布号 |
US9419121(B1) |
申请公布日期 |
2016.08.16 |
| 申请号 |
US201514841940 |
申请日期 |
2015.09.01 |
| 申请人 |
Mitsubishi Electric Research Laboratories, Inc. |
发明人 |
Teo Koon Hoo;Zhang Yuhao |
| 分类号 |
H01L29/778;H01L29/20;H01L29/205;H01L29/423;H01L29/417;H01L29/40;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
Vinokur Gene;McAleenan James;Tsukamoto Hironori |
| 主权项 |
1. A semiconductor device, comprising:
a layered structure forming multiple carrier channels extending in parallel at different depths of the semiconductor device; a gate electrode having multiple gate fingers of different lengths penetrating the layered structure to reach and control corresponding carrier channels at the different depths; and a carrier electrode having multiple carrier fingers of different lengths penetrating the layered structure to access the corresponding carrier channels, wherein the carrier fingers are interdigitated with the gate fingers. |
| 地址 |
Cambridge MA US |
