发明名称 Stacked damascene structures for microelectronic devices
摘要 A microelectronic device includes a dual-damascene interconnect structure and a single-damascene line structure directly on the dual-damascene interconnect structure. The dual-damascene interconnect structure and the single-damascene line structure may each include multiple line segments that are arranged in a brick wall pattern. The brick wall pattern may also be used with two or more single-damascene line structures. Various microelectronic devices and related fabrication methods are described.
申请公布号 US9431343(B1) 申请公布日期 2016.08.30
申请号 US201514691336 申请日期 2015.04.20
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Ki-Don;Kim Jinseok
分类号 H01L23/52;H01L23/528;H01L23/522;H01L23/532;H01L23/58 主分类号 H01L23/52
代理机构 Myers Bigel & Sibley, P.A. 代理人 Myers Bigel & Sibley, P.A.
主权项 1. A microelectronic device comprising: a microelectronic substrate; a dual-damascene interconnect structure on the microelectronic substrate, the dual-damascene interconnect structure comprising a conductive via and a first conductive line directly on the conductive via opposite the microelectronic substrate; and a single-damascene line structure directly on the dual-damascene interconnect structure, the single-damascene line structure comprising a second conductive line on the first conductive line opposite the conductive via.
地址 KR