发明名称 |
Vertical transistor fabrication and devices |
摘要 |
A method of fabricating a vertical field effect transistor including forming a first recess in a substrate; epitaxially growing a first drain from the first bottom surface of the first recess; epitaxially growing a second drain from the second bottom surface of a second recess formed in the substrate; growing a channel material epitaxially on the first drain and the second drain; forming troughs in the channel material to form one or more fin channels on the first drain and one or more fin channels on the second drain, wherein the troughs over the first drain extend to the surface of the first drain, and the troughs over the second drain extend to the surface of the second drain; forming a gate structure on each of the one or more fin channels; and growing sources on each of the fin channels associated with the first and second drains. |
申请公布号 |
US9431305(B1) |
申请公布日期 |
2016.08.30 |
申请号 |
US201514975168 |
申请日期 |
2015.12.18 |
申请人 |
International Business Machines Corporation |
发明人 |
Anderson Brent A.;Doris Bruce B.;Kim Seong-Dong;Venigalla Rajasekhar |
分类号 |
H01L27/092;H01L21/8238;H01L29/786;H01L29/78;H01L29/423;H01L27/112;H01L29/66 |
主分类号 |
H01L27/092 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
主权项 |
1. A method of fabricating a vertical field effect transistor comprising:
forming a first recess in a substrate, wherein the first recess has a first bottom surface; epitaxially growing a first drain from the first bottom surface of the first recess; epitaxially growing a second drain from the second bottom surface of a second recess formed in the substrate; epitaxially growing a channel material on the first drain and the second drain; forming troughs in the channel material to form one or more fin channels on the first drain and one or more fin channels on the second drain, wherein the troughs over the first drain extend to the surface of the first drain, and the troughs over the second drain extend to the surface of the second drain; forming a gate structure on each of the one or more fin channels; and growing sources on each of the fin channels associated with the first and second drains. |
地址 |
Armonk NY US |