| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer. |
| 申请公布号 |
US9431239(B1) |
申请公布日期 |
2016.08.30 |
| 申请号 |
US201514809278 |
申请日期 |
2015.07.26 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lee Chiu-Te;Lin Ke-Feng;Li Nien-Chung;Hwang Ching-Nan;Huang Shih-Teng;Liu Ming-Yen |
| 分类号 |
H01L21/02;H01L21/225;H01L21/311;H01L21/283;H01L29/66;H01L29/78;H01L29/06;H01L29/167;H01L29/49;H01L29/423 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess after removing the thermal oxide layer; and forming a gate dielectric layer in the epitaxial layer. |
| 地址 |
Hsin-Chu TW |
