发明名称 Electrode mesh galvanic cells
摘要 The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A thin aluminum anode galvanic cell having a meshed structure is provided which includes a catalytic metal layer positioned on a patterned silicon substrate, an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.
申请公布号 US9437906(B2) 申请公布日期 2016.09.06
申请号 US201414245611 申请日期 2014.04.04
申请人 University of South Florida 发明人 Cardenas-Valencia Andres M.;Dlutowski Jay;Calves Melynda C.;Bumgarner John;Langebrake Larry
分类号 H01M12/02;H01M6/40;H01M12/08;H01M4/88;H01M12/04;H01M4/04;H01M4/38;H01M12/06;H01M4/92;H01M4/134 主分类号 H01M12/02
代理机构 Smith & Hopen, P.A. 代理人 Sauter Molly L.;Smith & Hopen, P.A.
主权项 1. A thin aluminum anode galvanic cell on a silicon wafer, the cell comprising: a catalytic metal layer positioned on a patterned silicon substrate; an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer; and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.
地址 Tampa FL US