| 摘要 |
A slurry and method for chemical mechanical polishing (CMP) a structure including at least one metal based film and at least one underlying dielectric film includes at least one selective adsorption additive, such as a surfactant or a polymer. The metal film does not substantially adsorb the selective adsorption additive surfactant, while dielectric film substantially adsorbs the selective adsorption additive. A plurality of composite particles can be added, such as inorganic cores surrounded by the selective adsorption additive. In another embodiment, a slurry and method for polishing a metal film and an underlying dielectric film includes polishing during a first time interval using a first slurry composition and polishing during a second time interval with a second slurry composition, wherein a selectivity ratio for metal/dielectric polishing using the first slurry composition to the metal/dielectric selectivity using the second slurry composition is at least 1.3.
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