| 摘要 |
A mode of operation of a three-drain configured insulated gate field effect transistor which is extremely sensitive to magnetic fields is disclosed. The gate of the transistor is biased to a level less than transistor threshold, or alternatively, is connected to substrate ground. A first drain region opposite the source is biased to achieve avalanche breakdown of the junction. The other two drains are defined on either side of a line joining the source and first drain. These two drains are biased at a voltage below that required for avalanche of their junctions. In response to a magnetic field a voltage difference is generated across these two drains. In one embodiment of the invention, the region opposite the source is of a conductivity type the same as the substrate. In this configuration the detector does not require avalanche breakdown.
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