| 摘要 |
PURPOSE:To simultaneously form hole patterns on a high part and on a low part of a substrate reflection rate according to the respective design sizes by transcribing hole patterns on a mask a positive resist applied on the substrate having the high part and the low part of the substrate reflection rate by a projection exposure method followed by developing treatment. CONSTITUTION:Hole patterns on a mask are transcribed to a positive resist applied on a substrate having a high part and a low part of a substrate reflection rate by a projection exposure method followed by developing treatment. Accordingly, when respective hole patterns are formed on the high part and on the low part of the substrate reflection rate, a mask in which correction quantities of the mask sizes to be added to design sizes are different between the high part and the low part of the substrate is used. Thereby, on the high part and on the low part of the substrate reflection rate, hole patterns respectively according to the design sizes can simultaneously be formed. |
