发明名称 METHOD FOR POLISHING WAFER
摘要 <P>PROBLEM TO BE SOLVED: To obtain a single side mirror wafer having a high accuracy planarity at a low cost. <P>SOLUTION: A semiconductor wafer 19 having a thin film on the opposite sides formed when it is left as it is or during cleaning is held in a carrier hole 16a formed in a carrier plate 16. While supplying polishing liquid to the wafer surface, the plate is moved in a plane parallel with the surface of the carrier plate between an upper lapping plate 11 fixed with a first polishing cloth 13 and a lower lapping plate 12 fixed with a second polishing cloth 14 thus polishing the surface of the wafer. In such a method for polishing a semiconductor wafer, the thin film on the rear surface of the wafer touching the lower lapping plate is left as it is and the thin film on the surface of the wafer touching the upper lapping plate is removed, the polishing liquid exhibits a higher polishing rate to the wafer material than to the thin film, the first polishing cloth has hydrophilicity and the second polishing cloth has water repellency. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257900(A) 申请公布日期 2003.09.12
申请号 JP20020057634 申请日期 2002.03.04
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 TANIGUCHI TORU;SAKAI TAKASHI
分类号 B24B37/08;H01L21/304 主分类号 B24B37/08
代理机构 代理人
主权项
地址