发明名称 |
Electrostatic discharge protective device having a reduced current leakage |
摘要 |
In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.
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申请公布号 |
US5510947(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19950367747 |
申请日期 |
1995.01.03 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
PELLEGRINI, FRANCO;MORELLI, MARCO;CANCLINI, ATHOS |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06;H01L29/78;H03K17/08;H03K19/003;(IPC1-7):H02H9/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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