发明名称 Increasing signal to noise ratio of solid state image sensor with selectable individual pixel access
摘要 The method increases the signal-to-noise ratio of a solid sate image sensor to which radiation esp. X-ray radiation is applied, with selectable individual pixel access. The pixel signals generated and/or varied by an illumination charge generation are read out and are stored in an image memory for further processing. During the illumination process the pixel signals of at least part of the image sensor pixels are read out by resetting the pixel charge memory in the frame of a first scanning and are out into the image memory. The signals held in the memory are combined with further pixel individual signals read out after the illumination to generate a summed image.
申请公布号 DE19628675(A1) 申请公布日期 1998.01.29
申请号 DE19961028675 申请日期 1996.07.16
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 SKLEBITZ, HARTMUT, DIPL.-ING. (FH), 91056 ERLANGEN, DE
分类号 A61B6/03;H04N5/32;H04N5/345;H04N5/355;H05G1/44;H05G1/60;(IPC1-7):H05G1/64;A61B6/02;G01N23/04 主分类号 A61B6/03
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