发明名称 Ferroelectric thin film element and its manufacturing method, thin film capacitor and piezoelectric actuator using same
摘要 In a manufacturing method for a piezoelectric actuator a first electrode layer is formed on substrate, a ferroelectric thin film is formed on the first electrode layer, and an inorganic protective layer 4 is formed on the ferroelectric thin film. Then, the inorganic protective layer 4 and the ferroelectric thin film are heat-treated under an oxygen containing atmosphere, and a second electrode layer is formed on an oxidation diffusion layer,wherein the oxidation diffusion layer is formed on a surface of the ferroelectric thin film as a result of component diffusion of the ferroelectric thin film and oxidation of the inorganic protective layer 4 due to the heat treatment. By using this method, it is possible to improve ferroelectricity without deterioration or cracking of a surface of the ferroelectric thin film.
申请公布号 US2003175487(A1) 申请公布日期 2003.09.18
申请号 US20030356603 申请日期 2003.02.03
申请人 KITA HIROYUKI 发明人 KITA HIROYUKI
分类号 H01G4/33;H01L21/02;H01L21/8246;H01L27/105;H01L41/083;H01L41/09;H01L41/18;H01L41/22;H01L41/24;(IPC1-7):B32B9/00 主分类号 H01G4/33
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