发明名称 Method for contact-connecting a semiconductor component
摘要 A solder metal made of a eutectic or stoichiometric composition including at least two metallic or semiconducting elements is applied to a contact (of the semiconductor component, brought into contact with the metal layer of a metallized film and alloyed by heating into the metal layer of the film, thereby producing an electrically conductive connection having a higher melting point. A solder metal that is particularly suitable for such a purpose is the Bi22In78 (melting point 73° C.), Bi43Sn57, or In52Sn48, or BiIn, or BiIn2.
申请公布号 US2003176054(A1) 申请公布日期 2003.09.18
申请号 US20030352680 申请日期 2003.01.28
申请人 HUEBNER HOLGER;KRIPESH VAIDYANATHAN 发明人 HUEBNER HOLGER;KRIPESH VAIDYANATHAN
分类号 H01L21/60;H01L23/482;(IPC1-7):H01L21/44 主分类号 H01L21/60
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