| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which generation of bending can be suppressed in a whole device at forming of an encapsulating resin layer in a void between a semiconductor element and a board, and as a result, a highly reliable semiconductor device can be manufactured easily. SOLUTION: An encapsulating resin sheet 10 is loaded through plural spherical electrodes 2 for connection on a wiring circuit board 1 on which the electrodes 2 for connection are provided, and a semiconductor element 3 is loaded at a prescribed position on the encapsulating resin sheet 10. Afterwards, it is heated and held in a prescribed time, and pressurized and jointed in a state such that conditions (X) and (Y) are fulfilled, and encapsulating resin in a malted state is packed and hardened in a void between the semiconductor element 3 and the wiring circuit board 1, so that the void is resin encapsulated and a encapsulating resin layer is formed. When an initial residual heat of reaction quantity before heating of the encapsulating resin sheet 10 measured by a differential scanning calorimeter(DSC) is 100%, a residual heat of reaction quantity is less than 70% of the initial residual heat of reaction quantity in the condition (X). The temperature of the semiconductor element 3 is set higher than the temperature of the wiring circuit board 1, and the temperature difference between them is more than 50 deg.C in the condition (Y). |
