| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser substrate, in which cleavage defects such as breakage and crack are significantly reduced in cleaving and separating the semiconductor laser substrate into a bar shape. SOLUTION: In a semiconductor laser substrate 1, which is formed by stacking at least a semiconductor laser crystal layer 2 and a second electrode layer on a first electrode 4, and is cleaved and separated along a cleavage groove generated from a scribe flaw 6 formed at an end portion of the second electrode layer to produce a plurality of semiconductor laser bars, each semiconductor laser bar is divided into a plurality of units in a direction different from the direction of the cleavage groove, thus forming each semiconductor laser element. The second electrode layer is made up of a rectangular first part 5a, having the scribe flaw 6 formed thereon and a second part 5b divided into a plurality of units in the direction of the cleavage groove and the direction different from the direction of the cleavage groove. The second part 5b is arrayed on the semiconductor laser crystal layer at least to avoid the cleavage groove.</p> |
